IRG4BC20MD |
RFQ for IRG4BC20MD Required Field |
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| Technical/Catalog Information | IRG4BC20MDPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 18A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 11A |
| Power - Max | 60W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRG4BC20MDPBF IRG4BC20MDPBF |
| Product | Manufacturers | Pack | D/C |
| IRG4BC20MD | - | TO-220AB | `06+(pb-free) |
Features |
| • Rugged: 10sec short circuit capable at VGS=15V• Low VCE(on) for 4 to 10kHz applications• IGBT Co-packaged with ultra-soft-recovery antiparallel diode• Industry standard TO-220AB package |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 18 | A |
| IC @ TC = 100 | Continuous Collector Current | 11 | |
| ICM | Pulsed Collector Current | 36 | |
| ILM | Clamped Inductive Load Current | 36 | |
| IF @ TC = 100 | Diode Continuous Forward Current | 7.0 | |
| tsc | Short Circuit Withstand Time | 10 | s |
| IFM | Diode Maximum Forward Current | 36 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 24 | |
| TJ TSTG |
Operating Junction and | -55 to +150 | |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
